NPN PHOTOTRANSISTOR + INFRAROT EMITTING DIODE 10 PAAR

NPN PHOTOTRANSISTOR + INFRAROT EMITTING DIODE 10 PAAR
Preis: €1,99 ( inkl. MwSt. und zzgl. Versandkosten )


Zustand: Neu

Lieferzeit in Deutschland: 2-3 Werktage nach Zahlungseingang (Europa 7-10 Tage, Welt: ca. 3 Wochen)
Artikelstandort: Geestland, Deutschland
Versand nach: Weltweit
Artikelnr.: 10051-002
NPN PHOTOTRANSISTOR S350P Dunkelblau
+
INFRAROT EMITTING DIODE CQY36N Hellblau
10 PAAR


10051_002.jpg


(Artikelnummer: 10051 - 002)

Sie erwerben 10 Pärchen = 2 x 10 Stück je Sorte
NPN PHOTOTRANSISTOR S350P Dunkelblau
+
INFRAROT EMITTING DIODE CQY36N Hellblau
10 PAAR



Silicon NPN Phototransistor

Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat
window.
With a lead center–to–center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stackable
on PC boards and assembled to arrays of unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with p > 850nm.

Features
 High radiant sensitivity
 Miniature T– flat plastic package with IR filter
 Very wide angle of half sensitivity j = ± 40
 Suitable for near infrared radiation
 Suitable for 0.1” (2.54 mm) center–to–center
spacing
94 8640
Applications
Detector in electronic control and drive circuits


Absolute Maximum Ratings
Tamb = 25C
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage VCEO 32 V
Emitter Collector Voltage VECO 5 V
Collector Current IC 50 mA
Peak Collector Current tp/T = 0.5, tp  10 ms ICM 100 mA
Total Power Dissipation Tamb  55 C Ptot 100 mW
Junction Temperature Tj 100 C
Storage Temperature Range Tstg –55...+100 C
Soldering Temperature t  3 s Tsd 260 C
Thermal Resistance Junction/Ambient RthJA 450 K/W

Basic Characteristics
Tamb = 25C
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
IC = 1 mA V(BR)CEO 32 V
Collector Dark Current VCE = 20 V, E = 0 ICEO 2 200 nA
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 CCEO 6 pF
Collector Light Current Ee=1mW/cm2, =950nm,
VCE=5V
Ica 0.2 1 mA
Angle of Half Sensitivity j ±40 deg
Wavelength of Peak Sensitivity p 925 nm
Range of Spectral Bandwidth 0.5 860...990 nm
Collector Emitter Saturation
Voltage
Ee=1mW/cm2, =950nm,
IC=0.1mA
VCEsat 0.3 V
Turn–On Time VS=5V, IC=5mA, RL=100 ton 6 s
Turn–Off Time VS=5V, IC=5mA, RL=100 toff 5 s
Cut–Off Frequency VS=5V, IC=5mA, RL=100 fc 110 kHz



  • IR EMITTER, 950NM, T-3/4, THROUGH HOLE
  • Peak Wavelength:950nm
  • Forward Current If(AV):50mA
  • Rise Time:800ns
  • Radiant Intensity:1.5mW/Sr
  • Viewing Angle:55°
  • Supply Voltage Range:1.3V to 1.6V




Versandgewicht ca. 0,010 Kg.

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